Evidence map›Paper›PMID 40593994›Full record

ArticleScientific reports2025

High-energy argon implantation in carbon nanowalls as a way to produce electrodes for supercapacitor applications.

J V Bondareva, S A Smirnov, D O Potapov, D A Chernodubov, O N Dubinin, K I Maslakov, T B Egorova, A A Shibalova, M A Tarkhov, R A Khmelnitsky and 5 more

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In one paragraph

Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

J V BondarevaSkolkovo Institute of Science and Technology, Moscow, Russia, 121205. j.bondareva@skoltech.ru.
S A SmirnovMoscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia, 141701.
D O PotapovMoscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia, 141701.
D A ChernodubovMoscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia, 141701.
O N DubininSkolkovo Institute of Science and Technology, Moscow, Russia, 121205.
K I MaslakovLomonosov Moscow State University, Moscow, Russia, 119991.
T B EgorovaLomonosov Moscow State University, Moscow, Russia, 119991.
A A ShibalovaInstitute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, Russia, 119991.
M A TarkhovInstitute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, Russia, 119991.
R A KhmelnitskyLebedev Physical Institute, Russian Academy of Sciences, 53 Leninsky Prospect, Moscow, Russia, 119991.
V A DravinLebedev Physical Institute, Russian Academy of Sciences, 53 Leninsky Prospect, Moscow, Russia, 119991.
N D OrekhovMoscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia, 141701.
X ShiXi'an University of Architecture and Technology, Xi'an, 710055, China.
F S FedorovSkolkovo Institute of Science and Technology, Moscow, Russia, 121205.
S A EvlashinSkolkovo Institute of Science and Technology, Moscow, Russia, 121205.

Funding

Russian Science Foundation 22-73-10198
6 · The paper itself

Abstract

While ion implantation is a well-established technology in microelectronics, its potential for modifying carbon-based electrochemical energy storage materials remains underexplored. This study breaks new ground by demonstrating high-energy (40 keV) argon ion implantation as an effective strategy for tailoring the structure and properties of carbon nanowalls, a significantly contrasting with conventional low-energy approaches. Our findings reveal distinctive implantation-induced effects: crystal lattice reorganization, nanoholes formation, and unexpected surface functionalization after air exposure despite using chemically inert argon ions. These phenomena, validated through molecular dynamic simulations, represent previously unreported effects of high-energy ion treatment on carbon nanostructures. We highlight an important dependence of both structural evolution and electrochemical performance on implantation dose. TEM analysis shows that the dose of 1 × 10

Indexed as

Argon implantationCapacitanceCarbon nanowallsIon implantationSupercapacitor

Identifiers

PMID40593994
PMCPMC12215019

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.