ArticleNature communications2025
High-performance p-type bilayer WSe
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 12 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
12 citing papers in PubMed.
- Wafer-scale synthesis of WSeScience advances · 2026Article
- Two-dimensional materials for advanced back-end-of-line and wafer backside technologies.Nature nanotechnology · 2026Review
- Gate-level three-dimensional integration of two-dimensional logic cells.Nature communications · 2026Article
- Comprehensive Review on Doping Strategies for Two-Dimensional Tungsten Diselenide.International journal of molecular sciences · 2026Review
- Mimicking Pavlovian Conditioning with WSeACS applied materials & interfaces · 2026Article
- Bridging the p-type gap in oxide electronics with 2D semiconductors.Communications engineering · 2026Review
- Reductive Transformation of ALD TeOSmall (Weinheim an der Bergstrasse, Germany) · 2026Article
- Post-Moore two-dimensional integrated electronics for angstrom-nodes.National science review · 2026Review
- Exploiting the Photoresponse in LiInPNano letters · 2026Article
- van der Waals dielectrics for threshold engineering in two-dimensional field effect transistors.Nature communications · 2026Article
- Low resistance p-type contacts to monolayer WSeNature communications · 2026Article
- Advancing 2D CMOS electronics with high-performance p-type transistors.Nature communications · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
10 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has remained challenging, hindering the development of fully integrated 2D complementary metal-oxide-semiconductor (CMOS) technology. Here, we present p-type 2D FETs based on bilayer WSe
Identifiers
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.