Evidence map›Paper›PMID 40586716›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Controllable Preparation of Millimeter-Scale In-Plane Charged Domain Wall in a Lead-Free Ferroelectric Film.

Fang Liu, Mei-Xiong Zhu, Jia-Qi Liu, Li-Xin Yang, Yu-Jia Wang, Yin-Lian Zhu, Xiu-Liang Ma, Yun-Long Tang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Fang LiuShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
Mei-Xiong ZhuShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
Jia-Qi LiuShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
Li-Xin YangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
Yu-Jia WangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
Yin-Lian ZhuBay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, China.
Xiu-Liang MaBay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, China.
Yun-Long TangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.ORCID https://orcid.org/0000-0001-6555-3296

Funding

Guangdong Provincial Quantum Science Strategic Initiative GDZX2202001Guangdong Provincial Quantum Science Strategic Initiative GDZX2302001IMR Innovation Fund 2024-ZD01Liaoning Revitalization Talents Program XLYC2403183LiaoNing Revitalization Talents Program XLYC2203020National Key Research and Development Program of China 2024YFA1408000National Natural Science Foundation of China 52471022National Natural Science Foundation of China U24A2013Natural Science Foundation of LiaoNing 2025010060-JH6/1011Songshan Lake Materials Laboratory 2023SLABFK13Youth Innovation Promotion Association CAS 2021187
6 · The paper itself

Abstract

Ferroelectric domain walls are emerging as active components in nanoelectronics, offering a transformative paradigm for non-volatile memory and logic technologies. In particular, in-plane charged domain walls stand out for their potential to support unique functionalities, such as quantum confinement and tunneling effects, unlocking new possibilities for advanced device applications. Here, a facile approach is developed for fabricating large-scale continuous in-plane charged domain walls in Na

Indexed as

atomic scalecharged domain wallin‐plane charged antiphase boundarylead‐freepulsed laser deposition

Identifiers

PMID40586716
PMCPMC12442660

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.