Polyarylene Ether Nitrile/Modified Hollow Silica Composite Films for Ultralow Dielectric Properties and Enhanced Thermal Resistance.

Shuning Liu, Jinqi Wu, Yani Chen, Ting Zhang, Lifen Tong, Xiaobo Liu

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Article in Polymers, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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6 authors.

Shuning LiuSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.

Jinqi WuSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.

Yani ChenSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.

Ting ZhangSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.

Lifen TongSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.ORCID 0000-0003-2226-8406

Xiaobo LiuSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.

Funding

China Postdoctoral Science Foundation GZC20230371National Natural Science Foundation of China No. 51773028, 52073039

6 · The paper itself

Abstract

Highly heat-resistant and low-dielectric materials are crucial for achieving high-frequency communication, high-density integration, and high-temperature stability in modern electronics. In this work, surface modification of hollow silica microspheres (HGMs) using a silane coupling agent ((3-aminopropyl)triethoxysilane, KH550) yielded KHGM particles with a coating content of approximately 9.3 wt%, which were subsequently incorporated into high-performance polyarylene ether nitrile (PEN) polymers to fabricate composite films. The modified nanoparticles demonstrated significantly enhanced compatibility with the polymer matrix, while their hollow structure effectively reduced the dielectric constant of the composite film. When loaded with 50 wt% KHGM particles, the PEN-based composite film exhibited an elevated glass transition temperature of 198 °C and achieved a dielectric constant as low as 2.32 at 1 MHz frequency, coupled with dielectric loss below 0.016; compared with pure PEN, the dielectric constant of PEN/KHGM-50% decreased by 26.47%. Additionally, the composite demonstrated excellent water repellency. These advancements provide high-performance material support for applications in electronic communications, aerospace, and related fields.

Indexed as

high thermal resistancehollow silica microsphereslow-dielectricpolyarylene ether nitrile

Identifiers

PMID40574150

DOI10.3390/polym17121623

PMCPMC12197190

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