Evidence map›Paper›PMID 40572380›Full record

ArticleMicromachines2025

Design Considerations of an Analog Voltage Mode Readout Circuit for the CMOS-SOI-MEMS Gas Sensor Dubbed GMOS.

Efraim-Lavi Bukshish, Sharon Bar-Lev, Tanya Blank, Yael Nemirovsky

Abstract read
In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Efraim-Lavi BukshishElectrical and Computer Engineering Department, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Sharon Bar-LevElectrical and Computer Engineering Department, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Tanya BlankElectrical and Computer Engineering Department, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Yael NemirovskyElectrical and Computer Engineering Department, Technion-Israel Institute of Technology, Haifa 32000, Israel.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Modern gas sensor technology is becoming an important part of our lives. Hence, there has been considerable effort over the past 25 years towards the goal of creating low-cost gas sensors by employing modern microelectronics technology to manufacture both the sensing element and the signal conditioning circuitry on single silicon chips. CMOS sensors based on CMOS-SOI-MEMS technology seemed to be a good candidate for the monolithic approach. In this study, we critically review this approach. We show the advantages of chiplet-based designs for gas sensors that are based on CMOS-SOI-MEMS technology, dubbed GMOSs. The design of a monolithic GMOS system based on the voltage mode reading of a GMOS transistor connected in a three-terminal configuration is presented and validated for the first time. This study led to the understanding that a chiplet-like design should be preferred since the sensor and the readout circuitry of traditional gas sensors exhibit conflicting technological requirements. The innovation of this work is both in the readout design that it posits and in the resulting paradigm shift.

Indexed as

chipletCMOS–SOI–MEMSgas sensorGMOSMOS transistorsROICTMOSvoltage mode

Identifiers

PMID40572380
PMCPMC12195211

What OpenQuestion holds

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LicenceCC BY
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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.