Evidence map›Paper›PMID 40559251›Full record

ReviewNanomaterials (Basel, Switzerland)2025

Atomic Manipulation of 2D Materials by Scanning Tunneling Microscopy: Advances in Graphene and Transition Metal Dichalcogenides.

Tingting Wang, Lingtao Zhan, Teng Zhang, Yan Li, Haolong Fan, Xiongbai Cao, Zhenru Zhou, Qinze Yu, Cesare Grazioli, Huixia Yang and 2 more

Abstract readReview
In one paragraph

Review in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Tingting WangSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.ORCID 0000-0001-6520-7465
Lingtao ZhanSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Teng ZhangSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.ORCID 0000-0001-8739-7773
Yan LiSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Haolong FanSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Xiongbai CaoSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Zhenru ZhouSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Qinze YuSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Cesare GrazioliCNR-Istituto Officina dei Materiali (IOM), S.S. 14 km 163.5, 34149 Trieste, Italy.ORCID 0000-0002-6255-2041
Huixia YangSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Quanzhen ZhangSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.
Yeliang WangSchool of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China.

Funding

the National Key R&D Program of China 2024YFA1611300, 2021YFA1400103the National Natural Science Foundation of China 62271048, 62471038, 12304205, 92163206
6 · The paper itself

Abstract

This review provides a comprehensive overview of recent advances in atomic-scale manipulation of two-dimensional (2D) materials, particularly graphene and transition metal dichalcogenides (TMDs), using scanning tunneling microscopy (STM). STM, originally developed for high-resolution imaging, has evolved into a powerful tool for precise manipulation of 2D materials, enabling translational, rotational, folding, picking, and etching operations at the nanoscale. These manipulation techniques are critical for constructing custom heterostructures, tuning electronic properties, and exploring dynamic behaviors such as superlubricity, strain engineering, phase transitions, and quantum confinement effects. We detail the fundamental mechanisms behind STM-based manipulations and present representative experimental results, including stress-induced bandgap modulation, tip-induced phase transformations, and atomic-precision nanostructuring. The versatility and cleanliness of STM offer unique advantages over conventional transfer methods, paving the way for innovative applications in nanoelectronics, quantum devices, and 2D material-based systems. Finally, we discuss current challenges and future prospects of integrating STM manipulation with advanced computational techniques for automated nanofabrication.

Indexed as

atomic manipulationgraphenescanning tunneling microscopy (STM)transition metal dichalcogenides (TMDs)

Identifiers

PMID40559251
PMCPMC12196433

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.