Physically Transient Gelatin-Based Memristors of Buildable Logic Gates.

Lu Wang, Yuting Wang, Wenhao Li, Zhiqiang Gao, Yutong Han, Dianzhong Wen

Abstract read

In one paragraph

Article in Gels (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Lu WangSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, China.ORCID 0000-0002-7912-2021

Yuting WangSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Wenhao LiSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Zhiqiang GaoSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Yutong HanSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Dianzhong WenSchool of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Funding

Heilongjiang Province Double First-Class Disciplines Collaborative Innovation Achievement Pro-ject LJGXCG2023-030National Natural Science Foundation of China 62371183

6 · The paper itself

Abstract

Moore's Law is being challenged, as the use of transistors has limitations in terms of physical materials, energy consumption, performance, and economics. To continue Moore's Law, people have put forward many ideas, one of which is to find smaller devices to replace CMOS transistors. Memristor-based digital logic circuits open new avenues for exploring advanced computing architectures. In this paper, a biomemristor with the structure of Al/gelatin:Au NPs/Al/gelatin was fabricated using gelatin as the substrate and the host material of the dielectric layer. The device has a large switching current ratio, good stability, and physical transient characteristics. The device can be dissolved by soaking in deionized water for 5 min. In addition, the device successfully realizes the functions of NAND and NOR logic gates. It provides an effective method for research on green electronic devices with logic functions.

Indexed as

Au NPsgelatinNANDNORphysical transient

Identifiers

PMID40558727

DOI10.3390/gels11060428

PMCPMC12192105

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.