ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Heterojunction-Driven Stochasticity: Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
5 citing papers in PubMed.
- Electrostatic Gaussian Transistor for Real-Time Probabilistic Inference.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Thermally activated excess noise by subgap density-of-states in Si-doped ZnSnO thin-film transistor-type gas sensor.Microsystems & nanoengineering · 2026Article
- Transistor-Level Activation Functions via Two-Gate Designs: From Analog Sigmoid and Gaussian Control to Real-Time Hardware Demonstrations.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Heterojunction-Driven Stochasticity: Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices.Nano convergence · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
Abstract
Reliable true-random number generator (TRNG) hardware demands amplified intrinsic noise and multi-bit entropy output, which are difficult to achieve in conventional single-device TRNG implementation. A bi-heterojunction noise-enhanced negative transconductance (BHN-NTC) transistor is presented, incorporating an asymmetric PTCDI-C13 layer into an NTC transistor. This design enhances electron injection, expanding the NTC region (19 → 27 V) and increasing negative transconductance (-0.036 µS at V
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.