Evidence map›Paper›PMID 40532006›Full record

ArticleScience advances2025

Enhanced gating efficiency in vertical mixed molecular transistors with deep orbital level.

Donguk Kim, Hyemin Lee, Minwoo Song, Jongwoo Nam, Changjun Lee, Jaeyong Woo, Juntae Jang, Minsu Jeong, Hyeonwoo Yeo, Ryong-Gyu Lee and 5 more

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Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Donguk KimDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.ORCID 0009-0007-8280-3737
Hyemin LeeDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.ORCID 0009-0001-5285-4484
Minwoo SongDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Jongwoo NamDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.ORCID 0009-0009-3905-0500
Changjun LeeDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Jaeyong WooDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Juntae JangDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.ORCID 0000-0002-4999-8567
Minsu JeongSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.ORCID 0009-0007-7733-6871
Hyeonwoo YeoSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.
Ryong-Gyu LeeSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.
Eunje ParkDepartment of Materials Science and Engineering, Research Institute of Advanced Materials, Soft Foundry Institute and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.ORCID 0009-0008-8850-8058
Hyeonmin ChoiDepartment of Materials Science and Engineering, Research Institute of Advanced Materials, Soft Foundry Institute and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Yong-Hoon KimSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.ORCID 0000-0001-5209-4908
Keehoon KangDepartment of Materials Science and Engineering, Research Institute of Advanced Materials, Soft Foundry Institute and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.ORCID 0000-0003-1230-3626
Takhee LeeDepartment of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.ORCID 0000-0001-5988-5219

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The advancement of molecular junction transistors relies heavily on precise modulation of molecular orbitals, yet this is hindered by a limited transmission window and reduced bias stability, which typically restricts the range of active channel molecules adopted to those with orbital levels near Fermi level of the contacts. In this study, we demonstrate an effective orbital gating of prototypical alkanethiol-based molecules with deeper orbital levels in vertical large-area mixed self-assembled monolayers (SAMs) configuration that offers enhanced electrical bias stability and gating efficiency. By using ion gel gating in Au-molecule-graphene junction, the channel conductance could be modulated notably according to a clear transition from direct tunneling to Fowler-Nordheim tunneling regime. The mixed SAM molecular transistors also showed a superior gating efficiency due to the suppressed field screening effect by the net molecular dipole. This work is expected to contribute toward developing reliable three-terminal molecular device platform extended to molecules with deep orbital levels.

Identifiers

PMID40532006
PMCPMC12175899

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