ArticleSmall science2025
Robust Laser-Induced Graphene-Boron-Doped Diamond Nanowall Hybrid Nanostructures with Enhanced Field Electron Emission Performance for Microplasma Illumination Devices.
Article in Small science, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
1 citing paper in PubMed.
- BDD/PPy Composites with Low Interfacial Resistance for Energy Storage and Theoretical Feasibility for Pollutant Sensing.Nanomaterials (Basel, Switzerland) · 2026Article
Corrections and comments
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Authors and funding
12 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
This investigation introduces a scalable fabrication method for laser-induced graphene (LIG)-boron-doped diamond nanowall (BDNW) hybrid nanostructures, designed for field electron emission (FEE) cathode materials in microplasma illumination (μPI) devices. The two-step process involves fabricating BDNWs via microwave plasma-enhanced chemical vapor deposition, followed by drop-casting BDNW dispersion onto polyimide foils to create LIG-BDNW hybrid nanostructures. Topographic studies reveal that BDNWs on LIG boosts surface area and prevent graphene restacking. High-resolution transmission electron microscopy confirms precise BDNW decoration, creating sharp edges and high porosity. The effects of boron and nitrogen dopants, highlighted by Raman spectroscopy, are corroborated by near-edge X-ray absorption fire structure and X-ray photoelectron spectroscopies. The hybrid nanostructures exhibit high electrical conductivity and superior FEE properties, with a low turn-on field of 2.9 V μm
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Registered trials
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