Evidence map›Paper›PMID 40508662›Full record

ArticleMaterials (Basel, Switzerland)2025

Effect of Oxygen Vacancy Concentration on the Electrical Properties and Microstructure of

Tao Chen, Yang Chen, Ning Zhang, Tiantian Liu, Songlin Wang, Qi Zhang

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Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

6 authors.

Tao ChenSchool of Electronic Information and Automation, Tianjin University of Science and Technology, Tianjin 300222, China.
Yang ChenSchool of Electronic Information and Automation, Tianjin University of Science and Technology, Tianjin 300222, China.
Ning ZhangSchool of Microelectronics, Tianjin University, Tianjin 300072, China.
Tiantian LiuSchool of Electronic Information and Automation, Tianjin University of Science and Technology, Tianjin 300222, China.
Songlin WangSchool of Electronic Information and Automation, Tianjin University of Science and Technology, Tianjin 300222, China.
Qi ZhangSchool of Electronic Information and Automation, Tianjin University of Science and Technology, Tianjin 300222, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

This paper investigates the impact of sintering temperature on oxygen vacancy concentration and its subsequent effect on the microstructure and electrical properties of Bi4Ti3O12 (BIT) ceramics. To further clarify these effects, VASP software was employed to simulate BIT ceramics with varying oxygen vacancy concentrations.The experimental results demonstrate that sintering temperature significantly influences the oxygen vacancy concentration. At the optimal sintering temperature of 1080 °C, the BIT ceramics exhibit a balanced microstructure with a grain size of 4.16 μm, the lowest measured oxygen vacancy concentration of 18.44%, and a piezoelectric coefficient (d33) of 9.8 pC/N. Additionally, the dielectric loss (tanδ) remains below 0.2 at 500 °C, indicating excellent thermal stability. VASP-based simulations reveal that increasing the oxygen vacancy concentration from 18.56% to 44.55% results in a significant collapse of the band gap (from 2.8 eV → 1.0 eV) and a transition in conductivity type from p-type to n-type. This shift induces a leakage current-dominated threshold effect, leading to a decrease in piezoelectric properties (d33 reduced from 9.8 to 6.9 pC/N). Atomic-scale density of states (DOS) analyses indicate that the delocalization of Ti3+ and the weakening of Bi-O hybridization collectively induce lattice distortion and ferroelectric inconsistency. These changes are correlated with an increase in dielectric loss and a slight reduction in Curie temperature (from 620 °C → 618 °C). In conclusion, this study comprehensively elucidates the influence of oxygen vacancy concentration on the microstructure and electrical properties of BIT ceramics. The findings provide a theoretical foundation and practical insights for designing high-performance piezoelectric ceramics.

Indexed as

dielectric lossDOS density of statesenergy band structureoxygen vacancy concentrationVASP calculation

Identifiers

PMID40508662
PMCPMC12156073

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.