ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- Ultrahigh-sensitivity adaptive solar-blind organic neuromorphic sensors for robust corona discharge monitoring.Nature communications · 2026Article
- Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization.Advanced materials (Deerfield Beach, Fla.) · 2025Article
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4 authors.
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Abstract
Trap states at the gate dielectric-organic semiconductor (OSC) interface are one of the main sources of extrinsic traps in organic field-effect transistors (OFETs). However, they are often overlooked and their effects on the charge transport are attributed to the exposure of devices to ambient air. Here a first variable-temperature transfer length method characterization of both p- and n-channel OFETs under full high vacuum conditions is reported. By comparing a hydroxylated aluminum oxide (Al
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