Evidence map›Paper›PMID 40492510›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Mn

Shiqi Liu, Tingwei Chen, Baochun Wu, Haodong Fan, Yingmei Zhu, Sheng Bi, Yuntian Liu, Yinuo Shi, Wenbiao Zhang, Mengxi Wang and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. MnAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Shiqi LiuState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.ORCID https://orcid.org/0000-0002-9166-8254
Tingwei ChenState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.
Baochun WuState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, P. R. China.
Haodong FanState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.
Yingmei ZhuState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.
Sheng BiResearch Center for New Materials Computing, Zhejiang Lab, Hangzhou, 311100, P. R. China.
Yuntian LiuDepartment of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen, 518055, P. R. China.
Yinuo ShiState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.
Wenbiao ZhangState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.
Mengxi WangState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.
Qiang LiDepartment of Physics, Hubei Minzu University, Enshi, 445000, P. R. China.
Jie YangKey Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450001, P. R. China.
Jing LuState Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, P. R. China.
Tiejun ZhouState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.
Bo LiuState Key Laboratory of Spintronic Devices and Technologies, Hangzhou, 311305, P. R. China.

Funding

Key Scientific Research Project of Colleges and Universities in Henan Province 24A140022Natural Science Foundation of Henan Province 242300421671R&D Program of Zhejiang Province 2022C01053
6 · The paper itself

Abstract

Antiferromagnets have attracted widespread interest due to the advantages of no stray fields and ultrafast switching dynamics, promising for next-generation high-speed, high-density memories. However, over a long period, the effective detection of antiferromagnetic (AFM) orders remained being one of the greatest challenges of its application in magnetic random access memories (MRAM) because of its zero net magnetization. Recently, the preliminary demonstration of the tunneling magnetoresistance ratio(TMR) in antiferromagnetic tunnel junctions (AFMTJ) offered a feasible solution. Here, a Mn

Indexed as

antiferromagnetic tunnel junctionMn3SnNmultiple resistance statesnon‐collinear quantum transport simulationsSrTiO3

Identifiers

PMID40492510
PMCPMC12407296

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.