Evidence map›Paper›PMID 40470095›Full record

ArticleNanophotonics (Berlin, Germany)2025

Single-photon emitters in PECVD-grown silicon nitride films: from material growth to photophysical properties.

Zachariah O Martin, Alexander Senichev, Pranshu Maan, Mustafa G Ozlu, Miroslava Marinova, Zhongxia Shang, Alexei Lagutchev, Alexandra Boltasseva, Vladimir M Shalaev

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanophotonics (Berlin, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Quantum light: creation, integration, and applications.Nanophotonics (Berlin, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Zachariah O MartinElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
Alexander SenichevElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.ORCID https://orcid.org/0000-0003-2789-123X
Pranshu MaanElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
Mustafa G OzluElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
Miroslava MarinovaElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
Zhongxia ShangBirck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA.
Alexei LagutchevElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
Alexandra BoltassevaElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.ORCID https://orcid.org/0000-0001-8905-2605
Vladimir M ShalaevElmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single-photon emitters in SiN films grown by plasma-enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen-to-silicon precursor ratios, from silicon-rich to nitrogen-rich conditions, enabled by the low background fluorescence. We demonstrate single-photon emitters in SiN films with a higher refractive index (1.8-1.9) compared to our previous reports (∼1.7). Notably, nitrogen-rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon-rich SiN films exhibit red-shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab-to-fab transition of SiN-based quantum photonic technologies.

Indexed as

chemical vapor depositionquantum emittersquantum photonicssilicon nitridesingle-photon emitters

Identifiers

PMID40470095
PMCPMC12133249

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.