Evidence map›Paper›PMID 40451755›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2025

Ultrathin Gallium Oxide as Both Surface Passivation Layer with Conductive Filament Contacts and Alternative Gate Dielectric for 2D MOSFETs.

Sanghyun Moon, Jihyun Kim

Abstract read
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Sanghyun MoonDepartment of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea.ORCID https://orcid.org/0009-0006-1288-7317
Jihyun KimDepartment of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea.ORCID https://orcid.org/0000-0002-5634-8394

Funding

Defense Acquisition Program Administration (Korea) KRIT-CT-22-046Ministry of Trade, Industry and Energy RS-2022-00154729Ministry of Trade, Industry and Energy RS-2023-00267003
6 · The paper itself

Abstract

2D semiconductor devices undergo significant degradation upon exposure to ambient molecules and contaminants, necessitating effective passivation techniques for protecting both the contact and channel. In this study, ultrathin amorphous gallium oxide (GaO

Indexed as

2D heterostructure2D semiconductorconductive filament contactdielectriclogic devicepassivationultrathin gallium oxide

Identifiers

PMID40451755
PMCPMC12444828

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.