ArticleNano convergence2025
Selective metal passivation by vapor-dosed phosphonic acid inhibitors for area-selective atomic layer deposition of SiO
Article in Nano convergence, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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6 authors.
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Abstract
Aiming for atomic-scale precision alignment for advanced semiconductor devices, area-selective atomic layer deposition (AS-ALD) has garnered substantial attention because of its bottom-up nature that allows precise control of material deposition exclusively on desired areas. In this study, we develop a surface treatment to hinder the adsorption of Si precursor on metal surfaces by using a vapor-phase functionalization of bulky phosphonic acid (PA) self-assembled monolayers (SAMs). Through the chemical vapor transport (CVT) method, the bulky solid PA inhibitor with a fluorocarbon terminal group was effectively vaporized, and the conditions for maximizing the blocking effect of the inhibitor were confirmed by optimizing the process temperature and dwelling time. The unintended PA inhibitors adsorbed on SiO
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