Characterization of the INTPIX4 SOI pixel detector in transmission electron microscopy at 120 and 200 keV.

Yuichi Ishida, Takafumi Ishida, Makoto Kuwahara, Yasuo Arai, Koh Saitoh

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Article in Microscopy (Oxford, England), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

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5 authors.

Yuichi IshidaDepartment of Applied Physics, Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa, Nagoya 464-8601, Japan.

Takafumi IshidaDepartment of Applied Physics, Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa, Nagoya 464-8601, Japan.ORCID 0000-0002-0141-3961

Makoto KuwaharaInstitute of Materials and Systems for Sustainability, Nagoya University, Furo-Cho, Chikusa, Nagoya 464-8601, Japan.ORCID 0000-0003-0046-5716

Yasuo AraiAccelerator Laboratory, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan.

Koh SaitohDepartment of Applied Physics, Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa, Nagoya 464-8601, Japan.

Funding

Japan Society for the Promotion of ScienceKAKENHI JP21H04637KAKENHI JP22H03868

6 · The paper itself

Abstract

Imaging performance with 120 and 200 keV electrons was evaluated with an integration-type silicon-on-insulator pixel detector called INTPIX4 installed in a conventional transmission electron microscope. We demonstrated that single-electron events can be detected with INTPIX4 quantitatively. The gain and signals of single-electron events were measured. On the basis of the results, the yields of the collected charge for 120 and 200 keV electrons were estimated to be 96±5% and 97±5%, respectively. The modulation transfer function and detective quantum efficiency were also measured. INTPIX4 was clarified to have high detection efficiency and high sensitivity. We also found that it is necessary to use electron beams with energies less than 120 keV for INTPIX4 because multiple scattering of primary electrons at the silicon sensor degrades image resolution. This detector is expected to be applicable to low-dose observations in transmission electron microscopy.

Indexed as

detective quantum efficiencygainmodulation transfer functionsingle-electron eventSOI pixel detectortransmission electron microscopy

Identifiers

PMID40440166

DOI10.1093/jmicro/dfaf027

PMCPMC12685149

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