Evidence map›Paper›PMID 40436921›Full record

ArticleScientific reports2025

Investigating the effect of electrical and thermal transport properties on oxide-based memristors performance and reliability.

Armin Gooran-Shoorakchaly, Sarah S Sharif, Yaser M Banad

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Armin Gooran-ShoorakchalySchool of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA.
Sarah S SharifSchool of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA.
Yaser M BanadSchool of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA. bana@ou.edu.

Funding

National Science Foundation 2432082
6 · The paper itself

Abstract

Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching uniformity remains incompletely understood. Here, we develop a comprehensive physical model to investigate how electrical and thermal conductivities influence CF dynamics in TaO

Indexed as

Conductive filament (CF) dynamicsMemristive devicesNeuromorphic computingOxygen vacancy migration

Identifiers

PMID40436921
PMCPMC12119959

What OpenQuestion holds

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LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.