Evidence map›Paper›PMID 40434099›Full record

ArticleNano letters2025

Electron Cloaking in MoS

Yu-Xiang Chen, Jian-Jhang Lee, Ding-Rui Chen, You-Chen Lin, Hao-Ting Chin, Xiu-Yu Huang, Sheng-Kuei Chiu, Chu-Chi Ting, Mario Hofmann, Ya-Ping Hsieh

Abstract read
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In one paragraph

Article in Nano letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Yu-Xiang ChenInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
Jian-Jhang LeeInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
Ding-Rui ChenDepartment of Electronic Engineering, Chung Yuan Christian University, Taoyuan, 320, Taiwan.
You-Chen LinInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
Hao-Ting ChinInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
Xiu-Yu HuangDepartment of Materials Science and Engineering, Feng Chia University, Taichung, 407, Taiwan.
Sheng-Kuei ChiuDepartment of Materials Science, National University of Tainan, Tainan, 70005, Taiwan.ORCID 0000-0002-8293-9059
Chu-Chi TingGraduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi, 62102, Taiwan.ORCID 0000-0002-8768-2053
Mario HofmannDepartment of Physics, National Taiwan University, Taipei, 10617, Taiwan.ORCID 0000-0003-1946-2478
Ya-Ping HsiehInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.ORCID 0000-0002-6065-751X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Defects in two-dimensional (2D) materials represent both challenges and opportunities to their optoelectronic performance. While defects limit the carrier mobility in transistors through increased charge scattering, they also enhance 2D material functionality in sensors. Electron cloaking, a process that reduces Coulomb scattering via localized electron-defect interactions, has recently been shown to mitigate the performance degradation of bulk semiconductors in the presence of defects. We demonstrate the realization of electron cloaking in 2D materials through the metal decoration of defects. Sulfur vacancies were introduced in MoS

Indexed as

2D materialCoulomb scatteringdefect-limited mobilityelectron cloakingelectron−defect interactionMoS2vacancies

Identifiers

PMID40434099
PMCPMC12164522

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.