Solid State Defect Emitters With no Electrical Activity.

Pei Li, Song Li, Péter Udvarhelyi, Bing Huang, Adam Gali

Abstract read

In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Solid State Defect Emitters With no Electrical Activity.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Pei LiSchool of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China.ORCID https://orcid.org/0000-0002-4108-412X

Song LiBeijing Computational Science Research Center, Beijing, 100193, China.

Péter UdvarhelyiHUN-REN Wigner Research Centre for Physics, P.O. Box 49, Budapest, H-1525, Hungary.

Bing HuangBeijing Computational Science Research Center, Beijing, 100193, China.

Adam GaliHUN-REN Wigner Research Centre for Physics, P.O. Box 49, Budapest, H-1525, Hungary.ORCID https://orcid.org/0000-0002-3339-5470

Funding

European Commission 101046911European Commission 101135699Ministry of Culture and Innovation and the National Research, Development and Innovation Office 2022-2.1.1-NL-2022 00004National Key Research and Development of China 2022YFA1402400NSAF Joint Fund U2230402NSFC 12088101NSFC 12404094

6 · The paper itself

Abstract

Point defects may introduce defect levels into the fundamental bandgap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold energy of optical excitation associated with the optical gap of the host semiconductor. It is, therefore, a common assumption that solid-state defect emitters in semiconductors ultimately alter the conductivity of the host. This study demonstrate, on a particular defect in 4H silicon carbide, that an unrecognized class of point defects exists that are optically active but electrically inactive in the ground state.

Indexed as

first‐principles calculationsoptical transitionpoint defectssilicon carbidesingle photon emitter

Identifiers

PMID40433885

DOI10.1002/advs.202503350

PMCPMC12376652

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.