Evidence map›Paper›PMID 40428995›Full record

ArticleMaterials (Basel, Switzerland)2025

Optical Properties of GePb Alloy Realized by Ion Beam Technology.

Shuyu Wen, Yuan-Hao Zhu, Oliver Steuer, Mohd Saif Shaikh, Slawomir Prucnal, René Hübner, Andreas Worbs, Li He, Manfred Helm, Shengqiang Zhou and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Shuyu WenState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0002-2859-3659
Yuan-Hao ZhuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0002-7517-8941
Oliver SteuerHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0001-5203-3961
Mohd Saif ShaikhHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0002-7958-4306
Slawomir PrucnalHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0002-4088-6032
René HübnerHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0002-5200-6928
Andreas WorbsHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0009-0006-9972-0500
Li HeState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0003-3607-8603
Manfred HelmHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0001-8986-9914
Shengqiang ZhouHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0002-4885-799X
Jun-Wei LuoState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Yonder BerencénHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.ORCID 0000-0003-3529-0207

Funding

Deutsche Forschungsgemeinschaft DFG, BE7060/4-1
6 · The paper itself

Abstract

Incorporating lead (Pb) into the germanium (Ge) lattice emerges as a promising approach for bandgap engineering, enabling luminescence at longer wavelengths and paving the way for enhanced applications in short-wave infrared (SWIR) light sources and photodetectors. In this work, we report on optical properties of GePb alloys fabricated by a complementary metal-oxide semiconductor (CMOS)-compatible process that includes Pb ion implantation followed by solid-phase epitaxial regrowth via flash-lamp annealing. Optical characterization, including photoluminescence spectroscopy and Fourier-transform infrared reflectance spectroscopy, reveals that GePb alloys exhibit a reduced bandgap compared to pure Ge, resulting in longer-wavelength emission, while also providing broadband antireflective properties below 1800 nm wavelengths due to the surface subwavelength nanostructure. These findings position nanostructured GePb as a highly promising candidate for SWIR optoelectronic applications.

Indexed as

bandgap engineeringGePbion implantationphotoluminescence

Identifiers

PMID40428995
PMCPMC12112875

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.