ArticleNanomaterials (Basel, Switzerland)2025
Relation Between Thickness and TFTs Properties of HfO
Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
2 citing papers in PubMed.
- Solution-Processed High-k HfOMaterials (Basel, Switzerland) · 2026Article
- Surface and Interface Engineering in Integrated Photonic Sensors: Performance Trade-Offs, Stability, and Benchmarking.Micromachines · 2026Review
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators provide limited channel modulation due to their low dielectric constant, while alternative high-k dielectrics often suffer from high leakage currents and poor surface quality. Plasma-enhanced atomic layer deposition (PEALD) enables the atomic-level control of film thickness, resulting in high-quality films with superior conformality and uniformity. In this work, a systematic investigation was conducted on the properties of HfO
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Registered trials
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