Evidence map›Paper›PMID 40422148›Full record

ArticleBiomimetics (Basel, Switzerland)2025

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash.

Hwiho Hwang, Gyeonghae Kim, Dayeon Yu, Hyungjin Kim

Abstract read
In one paragraph

Article in Biomimetics (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Hwiho HwangDivision of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea.ORCID 0009-0001-0559-0762
Gyeonghae KimDivision of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Dayeon YuDivision of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Hyungjin KimDivision of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea.ORCID 0000-0002-4834-6882

Funding

Institute for Information and Communications Technology Promotion RS-2021-II212052, RS-2024-00506767National Research Foundation of Korea RS-2023-00260527, RS-2023-00270126, RS-2024-00406790
6 · The paper itself

Abstract

In this study, we propose a neuromorphic computing system based on a 3D-NAND flash architecture that utilizes analog input voltages applied through wordlines (WLs). The approach leverages the velocity saturation effect in short-channel MOSFETs, which enables a linear increase in drain current with respect to gate voltage in the saturation region. A NAND flash array with a TANOS (TiN/Al

Indexed as

3D-NAND architecturecomputing-in-memory (CIM)neuromorphic computingvector-matrix multiplication (VMM)velocity saturation

Identifiers

PMID40422148
PMCPMC12109456

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.