ArticleACS omega2025
Exploring Charge Transport Mechanisms and Dielectric Spectroscopy in Terp-Fc Layers Schottky Diodes under Temperature Variations.
Article in ACS omega, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
4 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
This research proposed a novel Al/Terp-Fc/p-Si/Al diode configuration that has never been presented. In order to investigate how the temperature affects impedance spectroscopy and charge transport processes, we have constructed the Al/Terp-Fc/p-Si diode structure. We have also shown that the synthesized material has the potential to be applied to further research on organic semiconductors. Thermionic emission theory was used to evaluate the diode's continual charge transport mechanism. In examining its functionality as a temperature sensor electronic device, we thoughtfully considered its ideality factor, barrier height, mobility, diffusion coefficient, diffusion length, and transit time. It is also observed that the reverse leakage current is dominated at all temperatures by Schottky emission at the measured voltage region. Low capacitance and high conductance values were noted in the manufactured Al/Terp-Fc/p-Si diode, especially at higher frequencies and at all temperatures. This phenomenon revealed the role of the temperature in the unique distribution, reorganization, and restructuring of surface states. The ac conductivity, dielectric constant, loss tangent, and complex dielectric/electric modulus of Al/Terp-Fc/p-Si diode were examined by the use of impedance/admittance characteristics at frequency range 300 Hz-1.5 MHz, operating between 300 and 400 K. Examining the dielectric characteristics' frequency dependence revealed that all of these variables are frequency-dependent, particularly in the low-frequency range, which is caused by interface states and surface polarization. Furthermore, an analysis of the Cole-Cole diagrams of the Al/Terp-Fc/p-Si diode is conducted, and the corresponding equivalent circuit is deduced. The equivalent circuit of the fabricated diode consisted of a resistance (
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.