ArticleNature communications2025
Toward high-current-density and high-frequency graphene resonant tunneling transistors.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
2 citing papers in PubMed.
- Raised or recessed? Finding the optimal gate architecture for improving the static performance of graphene transistors.Nanoscale advances · 2026Article
- Gallium Nitride Semiconductor Resonant Tunneling Transistor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
Corrections and comments
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Authors and funding
11 authors.
Funding
Abstract
Negative differential resistance (NDR), a peculiar electrical property in which current decreases with increasing voltage, is highly desirable for multivalued logic gates, memory devices, and oscillators. Recently, 2D quantum-tunneling NDR devices have attracted considerable attention because of the inherent atomically flat and dangling-bond-free surfaces of 2D materials. However, the low current density of 2D NDR devices limits their operating frequency to less than 2 MHz. In this study, graphene/hexagonal boron nitride (h-BN)/graphene resonant tunneling transistors (RTTs) were fabricated using graphene and h-BN barriers with different numbers of atomic layers, showing a mechanism enabling the observation of NDR in high current density devices. A triangular etching approach was proposed to suppress the effects of graphene-metal contact resistance and graphene sheet resistance, enabling pronounced NDR effect even in a 2D tunneling device with a single atomic layer h-BN barrier. A room-temperature peak current density up to 2700 μA/μm
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Registered trials
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