Evidence map›Paper›PMID 40402000›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect.

Yu-Wei Chen, Tung-Yuan Yu, Chun-Wei Huang, Tzu-Hsuan Yu, Yung-Chi Su, Chao-Rung Chen, Wei-Chen Hung, Pei-Yin Chang, Bhagwati Prasad, Yu-Chuan Lin and 2 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Yu-Wei ChenDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Tung-Yuan YuTaiwan Semiconductor Research Institute, Hsinchu, 300091, Taiwan.
Chun-Wei HuangDepartment of Materials Science and Engineering, Feng Chia University, Taichung, 407102, Taiwan.
Tzu-Hsuan YuDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Yung-Chi SuDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Chao-Rung ChenDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Wei-Chen HungDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Pei-Yin ChangDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Bhagwati PrasadDepartment of Materials Engineering, Indian Institute of Science, Bangalore, Karnataka, 560012, India.
Yu-Chuan LinDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Ramamoorthy RameshDepartment of Materials Science and Engineering, Rice University, Texas, 77005, USA.
Yen-Lin HuangDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.ORCID https://orcid.org/0000-0002-6129-8547

Funding

Ministry of EducationNational Science and Technology Council NSTC 110-2634-F-009-027National Science and Technology Council NSTC 111-2112-M-A49-012-MY3
6 · The paper itself

Abstract

The phenomenon of ferroelectric imprint, characterized by an asymmetric polarization switching behavior, poses significant challenges in the reliability and performance of ultra-low-voltage ferroelectric devices, including MagnetoElectric Spin-Orbit devices, Ferroelectric Random-Access Memory, Ferroelectric Field-Effect Transistors, and Ferroelectric Tunnel Junctions. In this study, the influence of electrode configuration in different device architectures are systematically investigated on their imprint effect. By tuning the work function of La

Indexed as

Ferroelectricsimprintreliabilityretentionultra‐low‐voltage

Identifiers

PMID40402000
PMCPMC12362776

What OpenQuestion holds

Textmetadata
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.