ArticleNature communications2025
Single V2 defect in 4H silicon carbide Schottky diode at low temperature.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
5 citing papers in PubMed.
- Quantum noise spectroscopy of nanoscale charge defects in silicon carbide at room temperature.Science advances · 2026Article
- Laser-Induced Creation of Coherent V2 Centers in Bulk-Grown Silicon Carbide.Nano letters · 2026Article
- Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform.Nano letters · 2026Article
- Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout.Npj nanophotonics · 2026Article
- Scalable Registration of Single Quantum Emitters within Solid Immersion Lenses through Femtosecond Laser Writing.Nano letters · 2025Article
Corrections and comments
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Authors and funding
14 authors.
Funding
Abstract
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in semiconductor industry. Here, we study the behaviour of single silicon vacancy (V2) colour centres in a metal-semiconductor (Au/Ti/4H-SiC) epitaxial wafer device, operating in a Schottky diode configuration. We explore the depletion of free carriers in the vicinity of the defect, as well as electrical tuning of the defect optical transition lines. By detecting single charge traps, we investigate their impact on V2 optical line width. Additionally, we investigate the charge-photon-dynamics of the V2 centre and find its dominating photon-ionisation processes characteristic rate and wavelength dependence. Finally, we probe the spin coherence properties of the V2 system in the junction and demonstrate several key protocols for quantum network applications. Our work shows the first demonstration of low temperature integration of a Schottky device with optical microstructures for quantum applications and paves the way towards fundamentally scalable and reproducible optical spin defect centres in solids.
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Registered trials
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