ArticleSmall (Weinheim an der Bergstrasse, Germany)2025
Tunable Nanoscale Metal‒Molecule‒Semiconductor Junctions via Light-Controlled Molecular Orientation.
Article in Small (Weinheim an der Bergstrasse, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
3 citing papers in PubMed.
- Molecular Rectification: Mechanisms, Modulation Strategies, and Device Realization.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Recent Advances in Bimetallic Site Catalysts for Photocatalytic Ammonia Synthesis: Synergistic Effects and Design Strategies.Small (Weinheim an der Bergstrasse, Germany) · 2026Review
- Tunable Nanoscale Metal‒Molecule‒Semiconductor Junctions via Light-Controlled Molecular Orientation.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
4 authors.
Funding
Abstract
Molecular electronics offers significant potential for the development of miniaturized and tunable electronic devices, with silicon (Si) remaining a cornerstone of modern semiconductor technology. This study presents a method for constructing tunable molecular circuits on Si electrodes using UV-controlled hydrosilylation reaction, enabling precise control over molecular orientation and bonding. When hydrogen-terminated Si surfaces are exposed to UV light in a solution of 9-decyne-1-ol, hydroxyl (OH) groups form covalent Si─O─C bonds, while in the absence of UV light, alkyne groups instead react to form Si─C bonds. This tunability allows precise positioning of oxygen atoms near the Si surface, thereby enhancing charge transfer in metal-molecule-semiconductor junctions and at electrified semiconductor-electrolyte interfaces. Conducting atomic force microscopy (C-AFM) measurements reveal that Pt─Si junctions exhibit Schottky diode characteristics, whereas Pt-molecule-Si junctions display Ohmic behaviour. Junctions formed via Si─O bonds demonstrate significantly lower resistance and at least a two-fold higher electron transfer rate constant (k
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.