ArticleLight, science & applications2025
High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication.
Article in Light, science & applications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
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The trial behind it
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Who cites it
8 citing papers in PubMed.
- Recent Progress of Photodetectors and Optoelectronic Synapses Based on Metal Oxide Thin-Film Transistors.Materials (Basel, Switzerland) · 2026Review
- Thermal Spin Coated PbS QD SWIR Imager for Non-Invasive Glucose Monitoring.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Interpulse-Interval-Controlled Nanoparticle Formation in Gas-Phase Burst-Mode Femtosecond Laser Ablation.Nanomaterials (Basel, Switzerland) · 2026Article
- Thiol-Amine Processed PbS Thin Films for Enhanced Near-Infrared Photodetection.Nanomaterials (Basel, Switzerland) · 2026Article
- Stable P-Type PbS Quantum Dot Ink for all-Blade-Coated Short-Wavelength Infrared Photodiodes.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Sputtering-driven formation of interstitial oxygen for intrinsic NIR detection in IGZO phototransistor.Scientific reports · 2026Article
- A Review of High-Throughput Optical Sensors for Food Detection Based on Machine Learning.Foods (Basel, Switzerland) · 2026Review
- A Photovoltaic-Integrated Broadband Photodetector Based on Vertically-Stacked Lateral-Aligned Nanowire Arrays.Sensors (Basel, Switzerland) · 2025Article
Corrections and comments
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Authors and funding
14 authors.
Funding
Abstract
The surging demand and adoption of infrared photodetectors (IRPDs) in sectors of imaging, mobile, healthcare, automobiles, and optical communication are hindered by the prohibitive costs of traditional IRPD materials such as InGaAs and HgCdTe. Quantum dots (QDs), especially lead chalcogenide (PbS) QDs, represent the next-generation low-bandgap semiconductors for near-infrared (NIR) detection due to their high optical absorption coefficient, tunable bandgap, low fabrication costs, and device compatibility. Innovative techniques such as ligand exchange processes have been proposed to boost the performance of PbS QDs photodetectors, mostly using short ligands like 1,2-ethanedithiol (EDT) and tetrabutylammonium iodide (TBAI). Our study explores the use of long-chain dithiol ligands to enhance the responsivity of PbS QDs/InGaZnO phototransistors. Long-chain dithiol ligands are found to suppress horizontal electron transport/leakage and electron trapping, which is beneficial for responsivity. Utilizing a novel ligand-exchange technique with 1,10-decanedithiol (DDT), we develop high-performance hybrid phototransistors with detectivity exceeding 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.