Evidence map›Paper›PMID 40378214›Full record

ArticleScience advances2025

Engineered high endurance in WO

Ziyi Yuan, Babak Bakhit, Yi-Xuan Liu, Zhuotong Sun, Giulio I Lampronti, Xinjuan Li, Simon M Fairclough, Benson K Tsai, Abhijeet Choudhury, Caterina Ducati and 3 more

Abstract read
In one paragraph

Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Article
  3. HfOScience advances · 2026
    Article
  4. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Ziyi YuanDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0002-4854-4926
Babak BakhitDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0002-3083-7536
Yi-Xuan LiuDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0002-9522-8651
Zhuotong SunDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0002-6951-7265
Giulio I LamprontiDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0002-1430-3446
Xinjuan LiDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.
Simon M FaircloughDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0003-3781-8212
Benson K TsaiSchool of Materials Engineering, Neil Armstrong Hall of Engineering, Purdue University, 701 West Stadium Avenue, West Lafayette, IN 47907-2045, USA.
Abhijeet ChoudhurySchool of Materials Engineering, Neil Armstrong Hall of Engineering, Purdue University, 701 West Stadium Avenue, West Lafayette, IN 47907-2045, USA.ORCID 0000-0002-8484-6083
Caterina DucatiDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0003-3366-6442
Haiyan WangSchool of Materials Engineering, Neil Armstrong Hall of Engineering, Purdue University, 701 West Stadium Avenue, West Lafayette, IN 47907-2045, USA.ORCID 0000-0002-7397-1209
Markus HellenbrandDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0002-5811-5228
Judith L MacManus-DriscollDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.ORCID 0000-0003-4987-6620

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Resistive switching devices are promising candidates for the next generation of nonvolatile memory and neuromorphic computing applications. Despite the advantages in retention and on/off ratio, filamentary-based memristors still suffer from challenges, particularly endurance (flash being a benchmark system showing 10

Identifiers

PMID40378214
PMCPMC12083524

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.