ArticleACS nano2025
Direct Visualization of Metal-Induced Gap State Distribution and Valley Band Evolution at Metal Versus Semimetal MoS
Article in ACS nano, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
2 citing papers in PubMed.
- Antimony-contact MoSMicrosystems & nanoengineering · 2026Article
- Electrostatically tunable moiré-mediated Wigner states via interfacial potential engineering in 2D van der Waals heterostructures.Nature communications · 2026Article
Corrections and comments
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Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The interlayer coupling between metals and the two-dimensional (2D) semiconductors' conduction band (CB), encompassing metal-induced gap states (MIGS) and valley band modulation, critically influences both the Schottky barrier height (SBH) and intrinsic sheet resistance. Understanding the CB modulation induced by metals/semimetals is, therefore, essential for contact engineering optimization. Given that the MIGS decay length and orbital interactions are spatially confined to the nanoscale region proximate to the 2D semiconductor interface, we employed scanning tunneling microscopy/spectroscopy to quantitatively determine the MIGS decay length and CB minimum on various metal/semimetal substrates. This approach enabled the comprehensive characterization of MIGS distribution, charge neutrality level variation, and SBH properties. Our findings demonstrate that maintaining valley band structure integrity during semimetal interlayer coupling facilitates reduced intrinsic sheet resistance. These results elucidate the mechanism underlying weak interlayer coupling at semimetal-2D semiconductor junctions and their superior contact transport performance, providing insights into the rational design of future 2D-based devices.
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Registered trials
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