Evidence map›Paper›PMID 40363484›Full record

ArticleMaterials (Basel, Switzerland)2025

Stability Improvement of Solution-Processed Metal Oxide Thin-Film Transistors Using Fluorine-Doped Zirconium Oxide Dielectric.

Haoxuan Xu, Bo Deng, Xinan Zhang

Abstract read
In one paragraph

Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Haoxuan XuShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.ORCID 0009-0004-3913-6164
Bo DengShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
Xinan ZhangShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.ORCID 0000-0003-2670-018X

Funding

National Natural Science Foundation of China U1504625Natural Science Foundation of Henan Province 202300410036Natural Science Foundation of Top Talent of SZTU GDRC202304
6 · The paper itself

Abstract

Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO

Indexed as

electrical performancefluorine-dopedthin-film transistorZrO2 dielectric

Identifiers

PMID40363484
PMCPMC12072743

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.