ArticleNanomaterials (Basel, Switzerland)2025
Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots.
Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- 940 Nm Near-Infrared Photosynapses Based on Sn─Pb Perovskite for Efficient Face Recognition.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Bidirectional Photoadaptive Organic Heterojunction Synaptic Transistors for Accurate Image Recognition in Machine Vision Systems.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
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6 authors.
Funding
Abstract
The traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices. The optoelectronic synaptic device serves as a fundamental hardware foundation for the realization of neuromorphic computing and plays a pivotal role in the development of neuromorphic chips. This study develops a ternary heterojunction synaptic transistor based on perovskite quantum dots to tackle the critical challenge of synaptic weight modulation in organic synaptic devices. Compared to binary heterojunction synaptic transistor, the ternary heterojunction synaptic transistor achieves an enhanced hysteresis window due to the synergistic charge-trapping effects of acceptor material and perovskite quantum dots. The memory window decreases with increasing source-drain voltage (V
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