Evidence map›Paper›PMID 40335517›Full record

ArticleNature communications2025

Ideal antiferroelectricity with large digital electrostrain in PbZrO

Yangyang Si, Ningbo Fan, Yongqi Dong, Zhen Ye, Shiqing Deng, Yijie Li, Chao Zhou, Qibin Zeng, Lu You, Yimei Zhu and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Yangyang Si *State Key Laboratory of Precision Welding and Joining of Materials and Structures, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China.
Ningbo Fan *Jiangsu Key Laboratory of Frontier Material Physics and Devices, School of Physical Science and Technology, Soochow University, Suzhou, China.ORCID http://orcid.org/0000-0002-6934-6339
Yongqi Dong *National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, China.
Zhen Ye *Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
Shiqing DengBeijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, China.ORCID http://orcid.org/0000-0001-7016-4084
Yijie LiState Key Laboratory of Precision Welding and Joining of Materials and Structures, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China.
Chao ZhouState Key Laboratory of Precision Welding and Joining of Materials and Structures, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China.
Qibin ZengInstitute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
Lu YouJiangsu Key Laboratory of Frontier Material Physics and Devices, School of Physical Science and Technology, Soochow University, Suzhou, China.ORCID http://orcid.org/0000-0003-3058-2884
Yimei ZhuCondensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA.ORCID http://orcid.org/0000-0002-1638-7217
Zhenlin LuoNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, China.ORCID http://orcid.org/0000-0002-7196-6537
Sujit DasMaterials Research Centre, Indian Institute of Science, Bangalore, India.ORCID http://orcid.org/0000-0001-9823-0207
Laurent BellaicheSmart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA.ORCID http://orcid.org/0000-0002-6181-2024
Bin XuJiangsu Key Laboratory of Frontier Material Physics and Devices, School of Physical Science and Technology, Soochow University, Suzhou, China. binxu19@suda.edu.cn.ORCID http://orcid.org/0000-0002-0107-0727
Huajun LiuInstitute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore. liu_huajun@imre.a-star.edu.sg.ORCID http://orcid.org/0000-0002-0540-6486
Zuhuang ChenState Key Laboratory of Precision Welding and Joining of Materials and Structures, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China. zuhuang@hit.edu.cn.ORCID http://orcid.org/0000-0003-1912-6490

Funding

National Natural Science Foundation of China (National Science Foundation of China) 52372105National Natural Science Foundation of China (National Science Foundation of China) 92477129
6 · The paper itself

Abstract

Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in thin-film form, the antiferroelectric behavior is often obscured by competing ferroic orders, resulting in slanted hysteresis loops with undesired remnant polarization, subsequently posing challenges in obtaining ideal antiferroelectricity and understanding their intrinsic electrical behavior. Here, atomistic models for controllable antiferroelectric-ferroelectric phase transition pathways are unveiled along specific crystallographic directions. Guided by the anisotropic phase transition and orientation design, we achieved ideal antiferroelectricity with square double hysteresis loop, large saturated polarization (~60 μC/cm

Identifiers

PMID40335517
PMCPMC12059014

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.