Crystallographic Engineering of CrN Buffer Layers for GaN Thin Film Epitaxy.

Kyu-Yeon Shim, Seongho Kang, Min-Joo Ahn, Yukyeong Cha, Eojin-Gyere Ham, Dohoon Kim, Dongjin Byun

Abstract read

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Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

7 authors.

Kyu-Yeon ShimDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Seongho KangDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.ORCID 0000-0003-0542-4569

Min-Joo AhnDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Yukyeong ChaDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Eojin-Gyere HamDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Dohoon KimDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Dongjin ByunDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Funding

Korea University K2104101

6 · The paper itself

Abstract

Gallium nitride (GaN) is commonly used in various semiconductor systems owing to its high mobility and thermal stability; however, the production of GaN thin films using the currently employed methods requires improvement. To facilitate the growth of high-quality GaN epitaxial thin films, this study explored the crystallographic structures, properties, and influences of chromium nitride (CrN) buffer layers sputtered under various conditions. The crystallographic orientation of CrN played a crucial role in determining the GaN film quality. For example, even when the crystallinity of the CrN (111) plane was relatively low, a single-phase CrN (111) buffer layer could provide a more favorable template for GaN epitaxy compared to cases where both the CrN (111) and Cr

Indexed as

buffer layerchrome nitride (CrN)epitaxial growthgallium nitride (GaN)metal organic chemical vapor deposition (MOCVD)

Identifiers

PMID40333513

DOI10.3390/ma18081817

PMCPMC12028831

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.