ArticleMaterials (Basel, Switzerland)2025
Surface Modification and Crystal Quality Improvement of 4H-SiC Film via Laser Treatment: Comparison of Continuous Wave and Femtosecond Pulse Laser.
Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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7 authors.
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Abstract
4H-SiC (silicon carbide), known as the third-generation semiconductor, has been widely used in high-power electronic devices. However, surface defects on wafers can seriously affect the key parameters and stability of silicon carbide devices. In this work, we pioneered a dual-laser comparative framework to systematically investigate the effects of continuous wave (CW) and femtosecond (FS) pulse laser micromachining on 4H-SiC epitaxial layers. CW laser restructuring optimized lattice integrity at sub-melting thresholds, while ultrafast FS pulse laser achieved submicron roughness control (from 8 μm to <0.5 μm) without obvious thermal collateral damage. To reveal the dynamic mechanism during the laser modification, multi-physics finite element models were adopted that decouple thermal and non-thermal mechanisms. This work expands the feasibility of laser micromachining for next-generation SiC device manufacturing.
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