Evidence map›Paper›PMID 40326990›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2025

Electrochemical Anodization for the Fabrication of Wafer-Scale p-Type Organic Permeable Base Transistors Arrays with MHz Operation.

Juan Wang, Amric Bonil, Jan Frede, Lautaro Petrauskas, Jörn Vahland, Tobias Antrack, Christian Matthus, Wooik Jang, Hans Kleemann

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Juan WangDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.ORCID https://orcid.org/0009-0003-1505-8491
Amric BonilDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.
Jan FredeDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.
Lautaro PetrauskasChair for Circuit Design and Network Theory (CCN), Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01069, Dresden, Germany.
Jörn VahlandDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.
Tobias AntrackDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.
Christian MatthusChair for Circuit Design and Network Theory (CCN), Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01069, Dresden, Germany.
Wooik JangDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.
Hans KleemannDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.ORCID https://orcid.org/0000-0002-9773-6676

Funding

Deutsche Forschungsgemeinschaft ArNeBOT 522208759Deutsche Forschungsgemeinschaft DFG496804567Deutsche Forschungsgemeinschaft KL 2961/5-1
6 · The paper itself

Abstract

Organic thin-film transistors (OTFTs) are promising for flexible, low-cost, and biocompatible electronics. However, conventional planar OTFTs are hindered by the large channel length limiting the transconductance and switching frequencies. Vertical OTFTs, particularly organic permeable-base transistors (OPBTs), address these challenges with short channel lengths defined by the layer thickness. While n-type OPBTs have advanced significantly, p-type OPBTs face challenges such as lower transmission, higher leakage currents, and unreliable fabrication processes. This work introduces a wafer-scale method for fabricating p-type OPBTs using electrochemical anodization of the base electrode. The anodization process applied directly atop the organic semiconductor, preserves electrical properties while suppressing base leakage. The resulting anodized OPBTs exhibit high-performance characteristics, including an on-current density of 301 mAcm

Indexed as

complementary inverterelectrochemical anodizationp‐type organic permeable base transistors (OPBTs)vertical organic transistorswafer‐scale transistor fabrication

Identifiers

PMID40326990
PMCPMC12272012

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.