ArticleNature communications2025
Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 15 papers.
What it found
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The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
15 citing papers in PubMed.
- Wafer-scale synthesis of WSeScience advances · 2026Article
- Wafer-scale growth of highly stable p-type semiconducting monolayer MoSiNature materials · 2026Article
- Comprehensive Review on Doping Strategies for Two-Dimensional Tungsten Diselenide.International journal of molecular sciences · 2026Review
- Synthesis and electrical characterization of rhenium-doped WSNanoscale advances · 2026Article
- Bridging the p-type gap in oxide electronics with 2D semiconductors.Communications engineering · 2026Review
- Article
- Scaling two-dimensional semiconductor nanoribbons for high-performance electronics.Nature communications · 2026Article
- Fermi-level depinning achieved by high-work-function AuNature communications · 2026Article
- Post-Moore two-dimensional integrated electronics for angstrom-nodes.National science review · 2026Review
- Low resistance p-type contacts to monolayer WSeNature communications · 2026Article
- Metallic tellurium for p-type contacts of two-dimensional MoTeNature communications · 2026Article
- Advancing 2D CMOS electronics with high-performance p-type transistors.Nature communications · 2025Article
- ALD-grown semimetallic TiSRSC advances · 2025Article
- Hydrazine Intercalation into 2D MoTeNanomaterials (Basel, Switzerland) · 2025Article
- X-Ray Irradiation Improved WSeNanomaterials (Basel, Switzerland) · 2025Article
Corrections and comments
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Authors and funding
11 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessive contact resistance due to ineffective or non-existent doping techniques hinders their technological readiness. Here, we unveil the doping mechanism of pure nitric oxide and demonstrate its effectiveness on wafer-scale grown monolayer and bilayer tungsten diselenide (1L- and 2L-WSe
Identifiers
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.