Evidence map›Paper›PMID 40301316›Full record

ArticleNature communications2025

2D Cd metal contacts via low-temperature van der Waals epitaxy towards high-performance 2D transistors.

Min Yue, Kenan Zhang, Mei Zhao, Yinan Wang, Dong Li, Jieyuan Liang, Biyuan Zheng, Chao Zou, Yu Ye, Peijian Wang and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Article
  3. Review
  4. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Min YueKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, Zhejiang, China.
Kenan ZhangDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.ORCID http://orcid.org/0000-0003-1343-6068
Mei ZhaoKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, Zhejiang, China. zhaomei@wzu.edu.cn.
Yinan WangKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, Zhejiang, China.
Dong LiCollege of Materials Science and Engineering, Hunan University, Changsha, 410082, China.ORCID http://orcid.org/0000-0003-0391-7060
Jieyuan LiangCollege of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
Biyuan ZhengCollege of Materials Science and Engineering, Hunan University, Changsha, 410082, China.ORCID http://orcid.org/0000-0003-4820-7038
Chao ZouKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, Zhejiang, China.ORCID http://orcid.org/0000-0002-3977-2986
Yu YeState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.ORCID http://orcid.org/0000-0001-6046-063X
Peijian WangKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, Zhejiang, China. pjwang@wzu.edu.cn.ORCID http://orcid.org/0000-0002-6201-7284
Lijie ZhangKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, Zhejiang, China. ljzhang@wzu.edu.cn.ORCID http://orcid.org/0000-0002-1123-7156
Shun WangKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, Zhejiang, China. shunwang@wzu.edu.cn.ORCID http://orcid.org/0000-0001-5305-5134

Funding

National Natural Science Foundation of China (National Science Foundation of China) 52072272, 52331009, 62304157, 51902061
6 · The paper itself

Abstract

Two-dimensional (2D) semiconductors hold great promise for future electronics, yet the fabrication of clean ohmic electrical contacts remains a key challenge. Traditional lithography and metallization processes often introduce interfacial disorder, and recently developed electrode-transfer-based techniques are difficult to implement without contaminating the interfaces between 2D crystals and metals. Here, we demonstrate a low-temperature chemical vapor deposition (CVD)-based van der Waals (vdW) epitaxy method to grow 2D metal (Cd) electrodes, eliminating lithography, deposition, or transfer processes and enabling the damage-free integration of 2D semiconductors. This thermodynamic integration strategy significantly mitigates the interfacial disorder and metal-induced gap states (MIGS), leading to low contact resistance (R

Identifiers

PMID40301316
PMCPMC12041491

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.