ArticleACS applied electronic materials2025
Threshold Resistive Switching in Inorganic Lead-Free Cesium-Bismuth Iodide Perovskite for Neuron Emulation.
Article in ACS applied electronic materials, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
1 citing paper in PubMed.
- Tunable synaptic memory response using organic regioisomeric donor-acceptor-donor luminophore triads.Chemical science · 2026Article
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Authors and funding
5 authors.
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Abstract
High-performance halide-based perovskite memory devices have been developed, exhibiting a variety of synaptic and neuronal functions based on nonvolatile and volatile or threshold switching memristors, respectively, compatible with low power consumption. However, the key ingredient in these perovskite-based systems is the presence of highly toxic lead, which hinders their further development and commercial use. A lead-free perovskite approach for memristive applications could enable sustainable devices, opening the path for practical applications. Herein, we report on the fabrication and characterization of a threshold resistive switching device using solution-based manufacturing, based on a lead-free, all-inorganic perovskite, namely cesium-bismuth iodide (Cs
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