ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Single-Layer Spin-Orbit-Torque Magnetization Switching Due to Spin Berry Curvature Generated by Minute Spontaneous Atomic Displacement in a Weyl Oxide.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- A Ferromagnetic Polar Metal With Efficient Electrical Switch of Magnetism.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Orientation-Engineered Insulator-Metal Transition in Vanadium Dioxide.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Single-Layer Spin-Orbit-Torque Magnetization Switching Due to Spin Berry Curvature Generated by Minute Spontaneous Atomic Displacement in a Weyl Oxide.Advanced materials (Deerfield Beach, Fla.) · 2025Article
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Authors and funding
12 authors.
Funding
Abstract
Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is expected to be significantly enhanced; this enhancement will increase the intrinsic spin Hall effect in ferromagnetic materials and, thus, the spin-orbit torques (SOTs). However, this intriguing approach is not applied to devices; generally, the spin Hall effect in ferromagnet/heavy-metal bilayer is used for SOT magnetization switching. Here, SOT-induced partial magnetization switching is demonstrated in a single layer of a single-crystalline Weyl oxide SrRuO
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