ArticleACS omega2025
Solid-State Laser Annealing (SLA) of Fully Solution-Processed Amorphous InZnO Thin-Film Transistors at Various Fluence.
Article in ACS omega, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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6 authors.
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Abstract
Advancing next-generation metal oxide thin film technologies demands the exploration of novel treatments for active materials. These treatments need to be processed via simple and cost-effective methods and low-temperature techniques to ensure compatibility with flexible substrates that are sensitive to high-temperature (>400 °C) annealing processes. To solve this problem, photoirradiation approaches on the active layers, such as ultraviolet treatment or excimer laser annealing (ELA), have been discovered as alternatives to conventional annealing techniques. The state-of-the-art ELA is limited primarily by its high-cost maintenance. Thus, we present an alternative photo-assisted approach to functionalize the amorphous Indium Zinc Oxide (a-IZO) films by employing solid-state laser annealing (SLA) post-treatment as an inexpensive option instead of the costly ELA process. The SLA approach can functionalize the a-IZO film to improve its film conductivity and function as the gate, source, and drain electrodes. After SLA post-treatment, a-IZO TFTs exhibited switching behavior with saturation mobility (
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