Evidence map›Paper›PMID 40246822›Full record

ArticleNature communications2025

Room-temperature multiferroicity in sliding van der Waals semiconductors with sub-0.3 V switching.

Rui Chen, Fanhao Meng, Hongrui Zhang, Yuzi Liu, Shancheng Yan, Xilong Xu, Linghan Zhu, Jiazhen Chen, Tao Zhou, Jingcheng Zhou and 18 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

28 authors.

Rui Chen *Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Fanhao Meng *Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. fhmeng@berkeley.edu.ORCID http://orcid.org/0000-0002-3058-1542
Hongrui Zhang *Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0000-0001-7896-019X
Yuzi Liu *Center for Nanoscale Materials, Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA.ORCID http://orcid.org/0000-0002-8733-1683
Shancheng Yan *College of Industry-Education Integration, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.ORCID http://orcid.org/0000-0003-2574-3479
Xilong XuDepartment of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA.
Linghan ZhuDepartment of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA.ORCID http://orcid.org/0000-0002-9259-5077
Jiazhen ChenDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Tao ZhouCenter for Nanoscale Materials, Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, 60439, USA.ORCID http://orcid.org/0000-0002-8093-7666
Jingcheng ZhouDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Fuyi YangDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Penghong CiDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0000-0001-5949-6854
Xiaoxi HuangDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0000-0002-8557-6791
Xianzhe ChenDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Tiancheng ZhangDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0009-0000-6538-3450
Yuhang CaiDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0000-0002-6278-204X
Kaichen DongDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Yin LiuDepartment of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27606, USA.ORCID http://orcid.org/0000-0002-5234-6922
Kenji WatanabeNational Institute for Material Science, Tsukuba, 305-0047, Japan.ORCID http://orcid.org/0000-0003-3701-8119
Takashi TaniguchiNational Institute for Material Science, Tsukuba, 305-0047, Japan.ORCID http://orcid.org/0000-0002-1467-3105
Chia-Ching LinComponents Research, Intel Corporation, Hillsboro, OR, 97124, USA.
Ashish Verma PenumatchaComponents Research, Intel Corporation, Hillsboro, OR, 97124, USA.ORCID http://orcid.org/0000-0002-0329-3721
Ian YoungComponents Research, Intel Corporation, Hillsboro, OR, 97124, USA.ORCID http://orcid.org/0000-0002-4017-5265
Emory ChanThe Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0000-0002-5655-0146
Junqiao WuDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0000-0002-1498-0148
Li YangDepartment of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA.
Ramamoorthy RameshDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.ORCID http://orcid.org/0000-0003-0524-1332
Jie YaoDepartment of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. yaojie@berkeley.edu.ORCID http://orcid.org/0000-0003-0557-759X

Funding

U.S. Department of Energy (DOE) DE-AC02-05-CH11231 (Organic-Inorganic Nanocomposites KC3104)
6 · The paper itself

Abstract

The search for van der Waals (vdW) multiferroic materials has been challenging but also holds great potential for the next-generation multifunctional nanoelectronics. The group-IV monochalcogenide, with an anisotropic puckered structure and an intrinsic in-plane polarization at room temperature, manifests itself as a promising candidate with coupled ferroelectric and ferroelastic order as the basis for multiferroic behavior. Unlike the intrinsic centrosymmetric AB stacking, we demonstrate a multiferroic phase of tin selenide (SnSe), where the inversion symmetry breaking is maintained in AA-stacked multilayers over a wide range of thicknesses. We observe that an interlayer-sliding-induced out-of-plane (OOP) ferroelectric polarization couples with the in-plane (IP) one, making it possible to control out-of-plane polarization via in-plane electric field and vice versa. Notably, thickness scaling yields a sub-0.3 V ferroelectric switching, which promises future low-power-consumption applications. Furthermore, coexisting armchair- and zigzag-like structural domains are imaged under electron microscopy, providing experimental evidence for the degenerate ferroelastic ground states theoretically predicted. Non-centrosymmetric SnSe, as the first layered multiferroic at room temperature, provides a novel platform not only to explore the interactions between elementary excitations with controlled symmetries, but also to efficiently tune the device performance via external electric and mechanical stress.

Identifiers

PMID40246822
PMCPMC12006417

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.