Evidence map›Paper›PMID 40240852›Full record

ReviewNature2025

The growing memristor industry.

Mario Lanza, Sebastian Pazos, Fernando Aguirre, Abu Sebastian, Manuel Le Gallo, Syed M Alam, Sumio Ikegawa, J Joshua Yang, Elisa Vianello, Meng-Fan Chang and 5 more

Abstract readReview
PubMed Publisher
In one paragraph

Review in Nature, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 23 papers.

0numbers the graph read from it
0cells of the map it votes in
23citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

23 citing papers in PubMed.

  1. Lattice Disorder in CuI Enables Filament-Free Transparent Memristors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  2. Effects of Gamma Irradiation on the Artificial Spiking Neurons Based on NbOSmall (Weinheim an der Bergstrasse, Germany) · 2026
    Article
  3. Article
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  8. CMOS-Integrated Synaptic Photoreceptor Chip Inspired by Insect Visual Processing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  9. Article
  10. A Rapid-prototyping CMOS-RRAM Integration Strategy.Microsystems & nanoengineering · 2026
    Article
  11. Article
  12. Article
  13. Article
  14. Article
  15. Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  16. Article
  17. Article
  18. Article
  19. Article
  20. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Mario Lanza *Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore. mlanza@nus.edu.sg.ORCID http://orcid.org/0000-0003-4756-8632
Sebastian Pazos *Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.ORCID http://orcid.org/0000-0002-7354-4530
Fernando AguirreIntrinsic Semiconductor Technologies, London, UK.
Abu SebastianIBM Research - Zurich, Rüschlikon, Switzerland.ORCID http://orcid.org/0000-0001-5603-5243
Manuel Le GalloIBM Research - Zurich, Rüschlikon, Switzerland.ORCID http://orcid.org/0000-0003-1600-6151
Syed M AlamEverspin Technologies, Chandler, AZ, USA.
Sumio IkegawaEverspin Technologies, Chandler, AZ, USA.ORCID http://orcid.org/0000-0002-3690-8964
J Joshua YangDepartment of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.ORCID http://orcid.org/0000-0001-8242-7531
Elisa VianelloCEA-Leti, Université Grenoble Alpes, Grenoble, France.ORCID http://orcid.org/0000-0002-8868-9951
Meng-Fan ChangDepartment of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan.ORCID http://orcid.org/0000-0001-6905-6350
Gabriel MolasWeebit Nano, Hod Hasharon, Israel.
Ishai NavehWeebit Nano, Hod Hasharon, Israel.
Daniele IelminiDipartimento di Elettronica Informazione e Bioingegneria (DEIB), Politecnico di Milano and IU.NET, Milano, Italy.ORCID http://orcid.org/0000-0002-1853-1614
Ming LiuKey Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-0937-7547
Juan B RoldanDepartamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Granada, Spain.ORCID http://orcid.org/0000-0003-1662-6457

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The semiconductor industry is experiencing an accelerated transformation to overcome the scaling limits of the transistor and to adapt to new requirements in terms of data storage and computation, especially driven by artificial intelligence applications and the Internet of Things. In this process, new materials, devices, integration strategies and system architectures are being developed and optimized. Among them, memristive devices and circuits-memristors are two-terminal memory devices that can also mimic some basic bioelectronic functions-offer a potential approach to create more compact, energy-efficient or better-performing systems. The memristor industry is growing quickly, raising abundant capital investment, creating new jobs and placing advanced products in the market. Here we analyse the status and prospects of the memristor industry, focusing on memristor-based products that are already commercially available, prototypes with a high technological readiness level that might affect the market in the near future, and discuss obstacles and pathways to their implementation.

Identifiers

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.