ArticleSensors (Basel, Switzerland)2025
A Second-Order Fast Discharge Circuit for Transient Electromagnetic Transmitter.
Article in Sensors (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- Sensing Platform Technologies of the Transient Electromagnetic Method for Urban Underground Space Detection: Challenges and Advances.Sensors (Basel, Switzerland) · 2026Review
- Special Issue on Advanced Sensing and Control Technologies in Power Electronics.Sensors (Basel, Switzerland) · 2025Article
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Authors and funding
5 authors.
Funding
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Abstract
To solve the problem of long turn-off times for transient electromagnetic (TEM) transmitters with inductive loads, a new second-order fast discharge circuit topology added into the original H-bridge structure for TEM transmitters is presented, which includes a capacitor, two Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), and two resistors. Firstly, the four operating stages and principles of the second-order circuit were analyzed. Then, the mathematical models of the turn-off time of the current and the voltage stress of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) were established using the analytical method. Finally, the parameters of the resistor and capacitor were selected by finding the optimal solution for the fixed transmitter coil. Compared with the simulation results of the other two topologies, the proposed topology demonstrates a current-independent turn-off time and achieves the shortest duration at 50 A, while maintaining lower voltage stress at 9 A. The experimental results of the prototype show that the turn-off time is always about 64 μs when the currents are 1 A, 5 A, and 9 A. Simulation and experimental results show that the second-order circuit reduces the MOSFET's turn-off time to 58 μs via Resistor-Inductor-Capacitor (RLC) series resonance, with the turn-off duration remaining load-current-independent.
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