ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Revealing Trapped Carrier Dynamics at Buried Interfaces in Perovskite Solar Cells via Infrared-Modulated Action Spectroscopy with Surface Photovoltage Detection.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Mitigating tin ion migration and reinforcing buried interface via synergistic polymer-modified tin oxide.Nature communications · 2026Article
- Using Multifunctional Molecular 'Glue' for Bilateral Interface Engineering to Stabilize Perovskite/SnOSmall (Weinheim an der Bergstrasse, Germany) · 2026Article
- Progress on Synergistic Enhancement of Perovskite Solar Cell Efficiency and Stability via Defect Engineering and Carrier Dynamics Optimization.Small methods · 2026Review
- Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors.Nature communications · 2025Article
- Revealing Trapped Carrier Dynamics at Buried Interfaces in Perovskite Solar Cells via Infrared-Modulated Action Spectroscopy with Surface Photovoltage Detection.Advanced materials (Deerfield Beach, Fla.) · 2025Article
Corrections and comments
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Authors and funding
14 authors.
Funding
Abstract
Interfacial engineering is a proven strategy to enhance the efficiency of perovskite solar cells (PeSCs) by controlling surface electronic defects and carrier trapping. The trap states at the "top" interface between the perovskite and upper charge extraction layers are experimentally accessible and have been extensively studied. However, the understanding of the unexposed "bottom" surface of the perovskite layer remains elusive, due to the lack of selective and non-destructive tools to access buried interface. Here, a new spectroscopy technique is introduced that monitors nanosecond to millisecond dynamics of trapped carriers at the buried interfaces by combining optical trap activation by infrared light with surface photovoltage detection. Applied to various PeSC architectures, this method reveals that most interfacial traps reside between the perovskite and hole transport layer, suggesting a predominance of hole traps (e.g., cation and lead vacancies) over electron traps (e.g., halide vacancies) in the studied PeSC systems. The proposed new approach separates interfacial carrier-loss contributions from the top and buried surfaces, providing design insights for achieving high-performance PeSCs through interface optimization.
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Registered trials
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