Evidence map›Paper›PMID 40214566›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Development of Defect-Rich WO

Xunfei He, Yinyan Gong, Lengyuan Niu, Can Li

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Article
  3. Semiconducting SnORSC advances · 2026
    Article
  4. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Xunfei HeInstitute of Optoelectronic Materials and Devices, College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310020, China.
Yinyan GongInstitute of Optoelectronic Materials and Devices, College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310020, China.
Lengyuan NiuInstitute of Optoelectronic Materials and Devices, College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310020, China.
Can LiInstitute of Optoelectronic Materials and Devices, College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310020, China.

Funding

National Natural Science Foundation of China 52103293
6 · The paper itself

Abstract

Semiconductors have emerged as promising candidates for surface-enhanced Raman scattering (SERS) applications due to their inexpensiveness and good chemical stability. Nevertheless, their low enhancement ability compared to noble metals makes it desirable to explore strategies for improving SERS performance. Since charge transfer (CT) between semiconductors and analytes plays a crucial role on the chemical enhancement mechanism of SERS, heterojunction engineering, a powerful method to boost optoelectronic performance via tailoring interfacial charge transfer, provides a promising approach. Here, we prepared defect-rich WO

Indexed as

heterojunctionphotocatalysissurface-enhanced Raman scatteringTiO2WO3-x

Identifiers

PMID40214566
PMCPMC11990290

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.