Evidence map›Paper›PMID 40214562›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications.

Jongyun Choi, Seung Hun Lee, Taehun Kim, Kyungtaek Min, Sung-Nam Lee

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Jongyun ChoiDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Seung Hun LeeDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Taehun KimDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.ORCID 0009-0007-9666-5945
Kyungtaek MinDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.ORCID 0000-0001-7626-043X
Sung-Nam LeeDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.ORCID 0000-0002-4800-5199

Funding

Ministry of Education RS-2024-00456813Ministry of SMEs and Startups RS-2024-00467765
6 · The paper itself

Abstract

This study explores the resistive switching (RS) behavior and conduction mechanisms of Ag/SF-Ag NP/Si memristors with varying Ag NP concentrations. I-V measurements confirm stable RS characteristics across 100 cycles, with consistent set and reset voltages. Increasing Ag NP concentration enhances conductive filament formation, leading to sharper switching transitions and a higher HRS/LRS ratio, w-hich increases from 43 (0 wt% Ag NP) to 4.6 × 10

Indexed as

Ag nanoparticlememristorresistive switchingsilk fibroin

Identifiers

PMID40214562
PMCPMC11990201

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.