Effect of Rapid Thermal Annealing on the Characteristics of Micro Zn-Doped Ga

Jiajia Tao, Xishun Jiang, Aijie Fan, Xianyu Hu, Ping Wang, Zuoru Dong, Yingjie Wu

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it

0cells of the map it votes in

2citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

Influence of Rapid Thermal Annealing (RTA) on the Properties of Indium Oxide Nanostructures.Nanomaterials (Basel, Switzerland) · 2026
Article
Structural and Electrically Conductive Properties of Plasma-Enhanced Chemical-Vapor-Deposited High-Resistivity Zn-Doped β-GaMicromachines · 2025
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Jiajia TaoShanghai Microwave Technology Research Institute (No. 50 Research Institute of China Electronics Technology Group Corporation), Shanghai 200331, China.

Xishun JiangSchool of Mechanical and Electronical Engineering, Chuzhou University, Chuzhou 239000, China.

Aijie FanZhangjiang Laboratory, Shanghai 201210, China.

Xianyu HuState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.

Ping WangSchool of Mechanical and Electronical Engineering, Chuzhou University, Chuzhou 239000, China.ORCID 0000-0001-5633-3216

Zuoru DongShanghai Microwave Technology Research Institute (No. 50 Research Institute of China Electronics Technology Group Corporation), Shanghai 200331, China.

Yingjie WuShanghai Microwave Technology Research Institute (No. 50 Research Institute of China Electronics Technology Group Corporation), Shanghai 200331, China.

Funding

Anhui University Provincial Natural Science Research Project, China KJ2021A1089Research Initiation Fund Project of Chuzhou University 2023qd94Shanghai Sailing Program Nos. 22YF1446200, 23YF1444300Shanghai Super Postdoctoral Plans Encouragement Programs No. 2023078

6 · The paper itself

Abstract

In this work, micro Zn-doped Ga

Indexed as

atomic layer depositionelectrical propertymicro Zn-doped Ga2O3 filmthermal annealing effect

Identifiers

PMID40214544

DOI10.3390/nano15070499

PMCPMC11990894

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.