ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025
Molecular Interlayer for High-Performance and Stable 2D Tin Halide Perovskite Transistor.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
2 citing papers in PubMed.
- Organic Interlayer for Enhanced Buried Interfaces in Wide-Bandgap Perovskite Solar Cells.ChemSusChem · 2025Article
- Molecular Interlayer for High-Performance and Stable 2D Tin Halide Perovskite Transistor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
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Authors and funding
7 authors.
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Abstract
Tin (Sn) halide perovskites present considerable potential for the advancement of high-performance p-channel field-effect transistors (FETs), attributable to their low hole effective mass and reduced carrier scattering. However, their intrinsic instability has impeded their ability to achieve the anticipated performance benchmarks. In this study, molecular interlayers are designed that not only passivate surface defects in Sn perovskites through their functional groups, leading to improved film formation and consequently enhanced performance and stability but also reduce the energy barrier at the source and drain interfaces through their strong dipole moments, thereby enhancing carrier transport. These synergistic effects result in FET devices exhibiting remarkable performance metrics, including effective mobility exceeding 11 cm
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Registered trials
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